Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

IEEE Electron Device Letters

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Bibliographic Details
Main Authors: Yu, H.Y., Hou, Y.T., Li, M.F., Kwong, D.-L.
Other Authors: ELECTRICAL ENGINEERING
Published: 2014
Subjects:
Dielectric films
Hole tunneling
MOSFETs
Oxynitride/oxide (N/O)
Silicon oxynitrides
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81811
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Institution: National University of Singapore
Description
Summary:IEEE Electron Device Letters

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