Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs
IEEE Electron Device Letters
Saved in:
Main Authors: | Yu, H.Y., Hou, Y.T., Li, M.F., Kwong, D.-L. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81811 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs
by: Yu, H.Y., et al.
Published: (2014) -
Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs
by: Yu, H., et al.
Published: (2014) -
Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
by: Yang, T., et al.
Published: (2014) -
SIMS study on N diffusion in hafnium oxynitride
by: Gui, D., et al.
Published: (2014) -
Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
by: Ang, D.S., et al.
Published: (2014)