A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics

10.1109/LED.2002.808159

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Bibliographic Details
Main Authors:	Yu, X., Zhu, C., Hu, H., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Frequency dependency High capacitance density Metal-insulator-metal (MIM) capacitor Thin-film devices Voltage coefficient of capacitance (VCC)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81873
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81873
record_format	dspace
spelling	sg-nus-scholar.10635-818732023-10-29T22:27:43Z A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics Yu, X. Zhu, C. Hu, H. Chin, A. Li, M.F. Cho, B.J. Kwong, D.-L. Foo, P.D. Yu, M.B. ELECTRICAL & COMPUTER ENGINEERING Frequency dependency High capacitance density Metal-insulator-metal (MIM) capacitor Thin-film devices Voltage coefficient of capacitance (VCC) 10.1109/LED.2002.808159 IEEE Electron Device Letters 24 2 63-65 EDLED 2014-10-07T04:22:42Z 2014-10-07T04:22:42Z 2003-02 Article Yu, X., Zhu, C., Hu, H., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B. (2003-02). A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics. IEEE Electron Device Letters 24 (2) : 63-65. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.808159 07413106 http://scholarbank.nus.edu.sg/handle/10635/81873 000182516600004 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Frequency dependency High capacitance density Metal-insulator-metal (MIM) capacitor Thin-film devices Voltage coefficient of capacitance (VCC)
spellingShingle	Frequency dependency High capacitance density Metal-insulator-metal (MIM) capacitor Thin-film devices Voltage coefficient of capacitance (VCC) Yu, X. Zhu, C. Hu, H. Chin, A. Li, M.F. Cho, B.J. Kwong, D.-L. Foo, P.D. Yu, M.B. A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics
description	10.1109/LED.2002.808159
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, X. Zhu, C. Hu, H. Chin, A. Li, M.F. Cho, B.J. Kwong, D.-L. Foo, P.D. Yu, M.B.
format	Article
author	Yu, X. Zhu, C. Hu, H. Chin, A. Li, M.F. Cho, B.J. Kwong, D.-L. Foo, P.D. Yu, M.B.
author_sort	Yu, X.
title	A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics
title_short	A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics
title_full	A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics
title_fullStr	A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics
title_full_unstemmed	A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics
title_sort	high-density mim capacitor (13 ff/μm2) using ald hfo2 dielectrics
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81873
_version_	1781784004296441856

A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics

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