A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics

A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics

10.1109/LED.2002.808159

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Bibliographic Details
Main Authors:	Yu, X., Zhu, C., Hu, H., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Frequency dependency High capacitance density Metal-insulator-metal (MIM) capacitor Thin-film devices Voltage coefficient of capacitance (VCC)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81873
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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