A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics

• Main Authors: Yu, X., Zhu, C., Hu, H., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Frequency dependency; High capacitance density; Metal-insulator-metal (MIM) capacitor; Thin-film devices; Voltage coefficient of capacitance (VCC)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81873
• Institution: National University of Singapore

10.1109/LED.2002.808159