A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics

• Main Authors: Yu, X., Zhu, C., Hu, H., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Frequency dependency; High capacitance density; Metal-insulator-metal (MIM) capacitor; Thin-film devices; Voltage coefficient of capacitance (VCC)
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/81873
• 機構: National University of Singapore

10.1109/LED.2002.808159