Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices

• Main Authors: Pu, J., Chan, D.S.H., Kim, S.-J., Cho, B.J.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Flash memory; GdAlOx blocking layer; Polysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS); Retension
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/81946
• 機構: National University of Singapore

10.1109/TED.2009.2030834