Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors

10.1063/1.3465661

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Main Authors:	Koh, S.-M., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82029
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82029
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spelling	sg-nus-scholar.10635-820292023-10-26T09:02:13Z Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors Koh, S.-M. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3465661 Applied Physics Letters 97 3 - APPLA 2014-10-07T04:24:33Z 2014-10-07T04:24:33Z 2010-07-19 Article Koh, S.-M., Samudra, G.S., Yeo, Y.-C. (2010-07-19). Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors. Applied Physics Letters 97 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3465661 00036951 http://scholarbank.nus.edu.sg/handle/10635/82029 000280255800050 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.3465661
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Koh, S.-M. Samudra, G.S. Yeo, Y.-C.
spellingShingle	Koh, S.-M. Samudra, G.S. Yeo, Y.-C. Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
author_sort	Koh, S.-M.
title	Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
title_short	Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
title_full	Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
title_fullStr	Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
title_full_unstemmed	Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
title_sort	carrier transport in strained n-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82029
_version_	1781784044828098560

Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors

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