Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors

Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors

10.1063/1.3465661

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Bibliographic Details
Main Authors: Koh, S.-M., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82029
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Institution: National University of Singapore
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