Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors

Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors

10.1063/1.3465661

Saved in:

Bibliographic Details
Main Authors:	Koh, S.-M., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82029
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
by: Koh, S.-M., et al.
Published: (2014)

Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost
by: Koh, S.-M., et al.
Published: (2014)

Strained channel transistor using strain field induced by source and drain stressors
by: Yeo, Y.-C., et al.
Published: (2014)

Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
by: Chui, K.-J., et al.
Published: (2014)

Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
by: Ang, K.-W., et al.
Published: (2014)

Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors
by: Madan, A., et al.
Published: (2014)

Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014)

Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
by: Ang, K.-W., et al.
Published: (2014)

Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor
by: Cheng, R., et al.
Published: (2014)

Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors
by: Ang, K.-W., et al.
Published: (2014)

Strained silicon nanowire transistors with germanium source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014)

Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
by: Tan, K.-M., et al.
Published: (2014)

Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
by: Tan, K.-M., et al.
Published: (2014)

Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
by: Tan, K.-M., et al.
Published: (2014)

Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor
by: Tan, K.-M., et al.
Published: (2014)

Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014)

Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors
by: Yeo, Y.-C., et al.
Published: (2014)

N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
by: Liow, T.-Y., et al.
Published: (2014)

Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
by: Wang, G.H., et al.
Published: (2014)

Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement
by: Wang, G.H., et al.
Published: (2014)

Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs
by: Koh, S.-M., et al.
Published: (2014)

Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors
by: Wong, H.-S., et al.
Published: (2014)

Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
by: Ang, K.-W., et al.
Published: (2014)

Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
by: Wang, G.H., et al.
Published: (2014)

Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs
by: Ang, K.-W., et al.
Published: (2014)

Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
by: Koh, S.-M., et al.
Published: (2014)

Tin-incorporated source/drain and channel materials for field-effect transistors
by: Yeo, Y.-C., et al.
Published: (2014)

Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
by: Liow, T.-Y., et al.
Published: (2014)

n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport
by: Chui, K.-J., et al.
Published: (2014)

Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors
by: Ang, K.-W., et al.
Published: (2014)

Source/drain germanium condensation for P-channel strained ultra-thin body transistors
by: Chui, K.-J., et al.
Published: (2014)

Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs
by: Wang, G.H., et al.
Published: (2014)

A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement
by: Toh, E.-H., et al.
Published: (2014)

Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
by: Liow, T.-Y., et al.
Published: (2014)

Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content
by: Liow, T.-Y., et al.
Published: (2014)

Carbon- and tin- Incorporated source/drain stressors for CMOS transistors
by: Yeo, Y.-C.
Published: (2014)

N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
by: Koh, S.-M., et al.
Published: (2014)

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
by: Ang, K.-W., et al.
Published: (2014)

Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
by: Cui, Guangda, et al.
Published: (2012)

Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
by: Wang, G.H., et al.
Published: (2014)