Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM

10.1016/S1359-6462(01)00743-6

Saved in:

Bibliographic Details
Main Authors:	Ho, Y.W., Ng, V., Choi, W.K., Ng, S.P., Osipowicz, T., Seng, H.L., Tjui, W.W., Li, K.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Germanium Nanocrystal Raman spectroscopy Rutherford backscattering Transmission electron microscopy
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82035
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82035
record_format	dspace
spelling	sg-nus-scholar.10635-820352023-10-26T09:10:17Z Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM Ho, Y.W. Ng, V. Choi, W.K. Ng, S.P. Osipowicz, T. Seng, H.L. Tjui, W.W. Li, K. ELECTRICAL & COMPUTER ENGINEERING PHYSICS Germanium Nanocrystal Raman spectroscopy Rutherford backscattering Transmission electron microscopy 10.1016/S1359-6462(01)00743-6 Scripta Materialia 44 8-9 1291-1295 SCMAF 2014-10-07T04:24:38Z 2014-10-07T04:24:38Z 2001-05-18 Article Ho, Y.W., Ng, V., Choi, W.K., Ng, S.P., Osipowicz, T., Seng, H.L., Tjui, W.W., Li, K. (2001-05-18). Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM. Scripta Materialia 44 (8-9) : 1291-1295. ScholarBank@NUS Repository. https://doi.org/10.1016/S1359-6462(01)00743-6 13596462 http://scholarbank.nus.edu.sg/handle/10635/82035 000169389400025 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Germanium Nanocrystal Raman spectroscopy Rutherford backscattering Transmission electron microscopy
spellingShingle	Germanium Nanocrystal Raman spectroscopy Rutherford backscattering Transmission electron microscopy Ho, Y.W. Ng, V. Choi, W.K. Ng, S.P. Osipowicz, T. Seng, H.L. Tjui, W.W. Li, K. Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM
description	10.1016/S1359-6462(01)00743-6
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ho, Y.W. Ng, V. Choi, W.K. Ng, S.P. Osipowicz, T. Seng, H.L. Tjui, W.W. Li, K.
format	Article
author	Ho, Y.W. Ng, V. Choi, W.K. Ng, S.P. Osipowicz, T. Seng, H.L. Tjui, W.W. Li, K.
author_sort	Ho, Y.W.
title	Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM
title_short	Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM
title_full	Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM
title_fullStr	Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM
title_full_unstemmed	Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM
title_sort	characterisation of ge nanocrystals in co-sputtered ge+sio2 system using raman spectroscopy, rbs and tem
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82035
_version_	1781784046116798464

Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM

Similar Items