Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique

10.1109/LED.2009.2015588

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Bibliographic Details
Main Authors:	Zhao, H., Kim, R., Paul, A., Luisier, M., Klimeck, G., Ma, F.-J., Rustagi, S.C., Samudra, G.S., Singh, N., Lo, G.-Q., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Charge-based capacitance measurement (CBCM) Nanowire MOSFETs Self-consistent C-V modeling Subfemtofarad-capacitance measurement
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82038
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82038
record_format	dspace
spelling	sg-nus-scholar.10635-820382023-10-26T22:07:05Z Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique Zhao, H. Kim, R. Paul, A. Luisier, M. Klimeck, G. Ma, F.-J. Rustagi, S.C. Samudra, G.S. Singh, N. Lo, G.-Q. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Charge-based capacitance measurement (CBCM) Nanowire MOSFETs Self-consistent C-V modeling Subfemtofarad-capacitance measurement 10.1109/LED.2009.2015588 IEEE Electron Device Letters 30 5 526-528 EDLED 2014-10-07T04:24:40Z 2014-10-07T04:24:40Z 2009 Article Zhao, H., Kim, R., Paul, A., Luisier, M., Klimeck, G., Ma, F.-J., Rustagi, S.C., Samudra, G.S., Singh, N., Lo, G.-Q., Kwong, D.-L. (2009). Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique. IEEE Electron Device Letters 30 (5) : 526-528. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2015588 07413106 http://scholarbank.nus.edu.sg/handle/10635/82038 000265711700034 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Charge-based capacitance measurement (CBCM) Nanowire MOSFETs Self-consistent C-V modeling Subfemtofarad-capacitance measurement
spellingShingle	Charge-based capacitance measurement (CBCM) Nanowire MOSFETs Self-consistent C-V modeling Subfemtofarad-capacitance measurement Zhao, H. Kim, R. Paul, A. Luisier, M. Klimeck, G. Ma, F.-J. Rustagi, S.C. Samudra, G.S. Singh, N. Lo, G.-Q. Kwong, D.-L. Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique
description	10.1109/LED.2009.2015588
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhao, H. Kim, R. Paul, A. Luisier, M. Klimeck, G. Ma, F.-J. Rustagi, S.C. Samudra, G.S. Singh, N. Lo, G.-Q. Kwong, D.-L.
format	Article
author	Zhao, H. Kim, R. Paul, A. Luisier, M. Klimeck, G. Ma, F.-J. Rustagi, S.C. Samudra, G.S. Singh, N. Lo, G.-Q. Kwong, D.-L.
author_sort	Zhao, H.
title	Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique
title_short	Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique
title_full	Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique
title_fullStr	Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique
title_full_unstemmed	Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique
title_sort	characterization and modeling of subfemtofarad nanowire capacitance using the cbcm technique
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82038
_version_	1781784046802567168

Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique

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