Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique

• Main Authors: Zhao, H., Kim, R., Paul, A., Luisier, M., Klimeck, G., Ma, F.-J., Rustagi, S.C., Samudra, G.S., Singh, N., Lo, G.-Q., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Charge-based capacitance measurement (CBCM); Nanowire MOSFETs; Self-consistent C-V modeling; Subfemtofarad-capacitance measurement
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82038
• Institution: National University of Singapore

10.1109/LED.2009.2015588