Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry

Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry

10.1116/1.1392400

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Bibliographic Details
Main Authors: Tripathy, S., Ramam, A., Chua, S.J., Pan, J.S., Huan, A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82042
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82042

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