Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry

10.1116/1.1392400

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Bibliographic Details
Main Authors:	Tripathy, S., Ramam, A., Chua, S.J., Pan, J.S., Huan, A.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82042
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82042
record_format	dspace
spelling	sg-nus-scholar.10635-820422024-11-12T01:19:13Z Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry Tripathy, S. Ramam, A. Chua, S.J. Pan, J.S. Huan, A. ELECTRICAL & COMPUTER ENGINEERING 10.1116/1.1392400 Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films 19 5 2522-2532 JVTAD 2014-10-07T04:24:43Z 2014-10-07T04:24:43Z 2001-09 Article Tripathy, S., Ramam, A., Chua, S.J., Pan, J.S., Huan, A. (2001-09). Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry. Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films 19 (5) : 2522-2532. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1392400 07342101 http://scholarbank.nus.edu.sg/handle/10635/82042 000171376700073 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1116/1.1392400
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tripathy, S. Ramam, A. Chua, S.J. Pan, J.S. Huan, A.
format	Article
author	Tripathy, S. Ramam, A. Chua, S.J. Pan, J.S. Huan, A.
spellingShingle	Tripathy, S. Ramam, A. Chua, S.J. Pan, J.S. Huan, A. Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
author_sort	Tripathy, S.
title	Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
title_short	Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
title_full	Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
title_fullStr	Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
title_full_unstemmed	Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
title_sort	characterization of inductively coupled plasma etched surface of gan using cl2/bcl3 chemistry
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82042
_version_	1821198545825300480

Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry

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