Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
10.1116/1.1392400
Saved in:
Main Authors: | Tripathy, S., Ramam, A., Chua, S.J., Pan, J.S., Huan, A. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82042 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples
by: Remashan, K., et al.
Published: (2014) -
Etching of GaN using Inductively Coupled Plasma
by: Ramam, A., et al.
Published: (2014) -
Electronic and vibronic properties of n-type GaN: The influence of etching and annealing
by: Tripathy, S., et al.
Published: (2014) -
Exposure of defects in GaN by plasma etching
by: Choi, H.W., et al.
Published: (2014) -
Interplay of defects, microstructures, and surface stoichiometry during plasma processing of GaN
by: Ramam, A., et al.
Published: (2014)