Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks

Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks

10.1016/j.microrel.2010.07.005

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Bibliographic Details
Main Authors: Samanta, P., Zhu, C., Chan, M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82075
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Institution: National University of Singapore
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Summary:10.1016/j.microrel.2010.07.005

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