Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentration

• Main Authors: Fang, L.W.-W., Zheng, Z., Pan, J.-S., Zhao, R., Li, M., Shi, L., Chong, T.-C., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82119
• 機構: National University of Singapore

10.1063/1.3079396