Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors:	Lee, S., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	CVD Hafnium oxide High K Thermal stability
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82182
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82182
record_format	dspace
spelling	sg-nus-scholar.10635-821822024-11-10T21:13:23Z Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics Lee, S. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING CVD Hafnium oxide High K Thermal stability Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 42 12 7256-7258 JAPND 2014-10-07T04:26:21Z 2014-10-07T04:26:21Z 2003-12 Article Lee, S.,Kwong, D.-L. (2003-12). Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 42 (12) : 7256-7258. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/82182 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	CVD Hafnium oxide High K Thermal stability
spellingShingle	CVD Hafnium oxide High K Thermal stability Lee, S. Kwong, D.-L. Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics
description	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lee, S. Kwong, D.-L.
format	Article
author	Lee, S. Kwong, D.-L.
author_sort	Lee, S.
title	Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics
title_short	Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics
title_full	Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics
title_fullStr	Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics
title_full_unstemmed	Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics
title_sort	dual poly-si gate metal oxide semiconductor field effect transistors fabricated with high-quality chemical vapor deposition hfo 2 gate dielectrics
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82182
_version_	1821191823108866048

Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics

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