Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application

• المؤلفون الرئيسيون: Duttagupta, S., Ma, F.-J., Hoex, B., Aberle, A.G.
• مؤلفون آخرون: ELECTRICAL & COMPUTER ENGINEERING
• التنسيق: مقال
• منشور في: 2014
• الموضوعات: Boron doped p+ emitters; Crystalline silicon; Plasma-enhanced chemical vapor deposition; Silicon oxide/Silicon nitride dielectric stacks; Surface passivation
• الوصول للمادة أونلاين: http://scholarbank.nus.edu.sg/handle/10635/82313

10.1016/j.solmat.2013.09.004