Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs
10.1149/1.3489073
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2014
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sg-nus-scholar.10635-823712023-10-30T23:07:15Z Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs Chin, H.-C. Gong, X. Wang, L. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3489073 Electrochemical and Solid-State Letters 13 12 H440-H442 ESLEF 2014-10-07T04:28:34Z 2014-10-07T04:28:34Z 2010 Article Chin, H.-C., Gong, X., Wang, L., Yeo, Y.-C. (2010). Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs. Electrochemical and Solid-State Letters 13 (12) : H440-H442. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3489073 10990062 http://scholarbank.nus.edu.sg/handle/10635/82371 000283361600028 Scopus |
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10.1149/1.3489073 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Chin, H.-C. Gong, X. Wang, L. Yeo, Y.-C. |
| format |
Article |
| author |
Chin, H.-C. Gong, X. Wang, L. Yeo, Y.-C. |
| spellingShingle |
Chin, H.-C. Gong, X. Wang, L. Yeo, Y.-C. Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs |
| author_sort |
Chin, H.-C. |
| title |
Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs |
| title_short |
Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs |
| title_full |
Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs |
| title_fullStr |
Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs |
| title_full_unstemmed |
Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs |
| title_sort |
fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of in0.53 ga0.47 as n-mosfets |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82371 |
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