Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

10.1109/TED.2003.816920

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Bibliographic Details
Main Authors: Joo, M.S., Cho, B.J., Yeo, C.C., Chan, D.S.H., Whoang, S.J., Mathew, S., Bera, L.K., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Hafnium aluminate
Hafnium oxide
High-K
MOCVD
Thermal stability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82375
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2003.816920

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