Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

10.1109/TED.2003.816920

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Bibliographic Details
Main Authors:	Joo, M.S., Cho, B.J., Yeo, C.C., Chan, D.S.H., Whoang, S.J., Mathew, S., Bera, L.K., Balasubramanian, N., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Hafnium aluminate Hafnium oxide High-K MOCVD Thermal stability
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82375
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82375
record_format	dspace
spelling	sg-nus-scholar.10635-823752023-10-30T22:31:58Z Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process Joo, M.S. Cho, B.J. Yeo, C.C. Chan, D.S.H. Whoang, S.J. Mathew, S. Bera, L.K. Balasubramanian, N. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Hafnium aluminate Hafnium oxide High-K MOCVD Thermal stability 10.1109/TED.2003.816920 IEEE Transactions on Electron Devices 50 10 2088-2094 IETDA 2014-10-07T04:28:37Z 2014-10-07T04:28:37Z 2003-10 Article Joo, M.S., Cho, B.J., Yeo, C.C., Chan, D.S.H., Whoang, S.J., Mathew, S., Bera, L.K., Balasubramanian, N., Kwong, D.-L. (2003-10). Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process. IEEE Transactions on Electron Devices 50 (10) : 2088-2094. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2003.816920 00189383 http://scholarbank.nus.edu.sg/handle/10635/82375 000185565600013 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Hafnium aluminate Hafnium oxide High-K MOCVD Thermal stability
spellingShingle	Hafnium aluminate Hafnium oxide High-K MOCVD Thermal stability Joo, M.S. Cho, B.J. Yeo, C.C. Chan, D.S.H. Whoang, S.J. Mathew, S. Bera, L.K. Balasubramanian, N. Kwong, D.-L. Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
description	10.1109/TED.2003.816920
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Joo, M.S. Cho, B.J. Yeo, C.C. Chan, D.S.H. Whoang, S.J. Mathew, S. Bera, L.K. Balasubramanian, N. Kwong, D.-L.
format	Article
author	Joo, M.S. Cho, B.J. Yeo, C.C. Chan, D.S.H. Whoang, S.J. Mathew, S. Bera, L.K. Balasubramanian, N. Kwong, D.-L.
author_sort	Joo, M.S.
title	Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
title_short	Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
title_full	Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
title_fullStr	Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
title_full_unstemmed	Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
title_sort	formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in mocvd process
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82375
_version_	1781784121819791360

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

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