Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

10.1063/1.4816695

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Bibliographic Details
Main Authors: Guo, P., Han, G., Gong, X., Liu, B., Yang, Y., Wang, W., Zhou, Q., Pan, J., Zhang, Z., Soon Tok, E., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82404
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Institution: National University of Singapore
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Summary:10.1063/1.4816695

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