Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

• Main Authors: Guo, P., Han, G., Gong, X., Liu, B., Yang, Y., Wang, W., Zhou, Q., Pan, J., Zhang, Z., Soon Tok, E., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82404
• Institution: National University of Singapore

10.1063/1.4816695