Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

10.1063/1.4816695

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Main Authors:	Guo, P., Han, G., Gong, X., Liu, B., Yang, Y., Wang, W., Zhou, Q., Pan, J., Zhang, Z., Soon Tok, E., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82404
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82404
record_format	dspace
spelling	sg-nus-scholar.10635-824042023-10-26T09:01:03Z Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing Guo, P. Han, G. Gong, X. Liu, B. Yang, Y. Wang, W. Zhou, Q. Pan, J. Zhang, Z. Soon Tok, E. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING PHYSICS 10.1063/1.4816695 Journal of Applied Physics 114 4 - JAPIA 2014-10-07T04:29:00Z 2014-10-07T04:29:00Z 2013-07-28 Article Guo, P., Han, G., Gong, X., Liu, B., Yang, Y., Wang, W., Zhou, Q., Pan, J., Zhang, Z., Soon Tok, E., Yeo, Y.-C. (2013-07-28). Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing. Journal of Applied Physics 114 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4816695 00218979 http://scholarbank.nus.edu.sg/handle/10635/82404 000322539300104 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.4816695
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Guo, P. Han, G. Gong, X. Liu, B. Yang, Y. Wang, W. Zhou, Q. Pan, J. Zhang, Z. Soon Tok, E. Yeo, Y.-C.
format	Article
author	Guo, P. Han, G. Gong, X. Liu, B. Yang, Y. Wang, W. Zhou, Q. Pan, J. Zhang, Z. Soon Tok, E. Yeo, Y.-C.
spellingShingle	Guo, P. Han, G. Gong, X. Liu, B. Yang, Y. Wang, W. Zhou, Q. Pan, J. Zhang, Z. Soon Tok, E. Yeo, Y.-C. Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
author_sort	Guo, P.
title	Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
title_short	Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
title_full	Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
title_fullStr	Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
title_full_unstemmed	Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
title_sort	ge0.97sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: impact of si surface passivation layer thickness and post metal annealing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82404
_version_	1781784128977371136

Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

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