Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation
10.1109/TED.2006.870273
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sg-nus-scholar.10635-824432023-10-26T21:25:13Z Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation Tan, Y.N. Chim, W.K. Choi, W.K. Joo, M.S. Cho, B.J. ELECTRICAL & COMPUTER ENGINEERING Flash memories Hafnium aluminum oxide Hafnium oxide High dielectric constant (high-k) Polysilicon-oxide-nitride-oxide-silicon (SONOS) 10.1109/TED.2006.870273 IEEE Transactions on Electron Devices 53 4 654-662 IETDA 2014-10-07T04:29:27Z 2014-10-07T04:29:27Z 2006-04 Article Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Cho, B.J. (2006-04). Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation. IEEE Transactions on Electron Devices 53 (4) : 654-662. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.870273 00189383 http://scholarbank.nus.edu.sg/handle/10635/82443 000236473500010 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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Flash memories Hafnium aluminum oxide Hafnium oxide High dielectric constant (high-k) Polysilicon-oxide-nitride-oxide-silicon (SONOS) |
| spellingShingle |
Flash memories Hafnium aluminum oxide Hafnium oxide High dielectric constant (high-k) Polysilicon-oxide-nitride-oxide-silicon (SONOS) Tan, Y.N. Chim, W.K. Choi, W.K. Joo, M.S. Cho, B.J. Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation |
| description |
10.1109/TED.2006.870273 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Tan, Y.N. Chim, W.K. Choi, W.K. Joo, M.S. Cho, B.J. |
| format |
Article |
| author |
Tan, Y.N. Chim, W.K. Choi, W.K. Joo, M.S. Cho, B.J. |
| author_sort |
Tan, Y.N. |
| title |
Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation |
| title_short |
Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation |
| title_full |
Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation |
| title_fullStr |
Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation |
| title_full_unstemmed |
Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation |
| title_sort |
hafnium aluminum oxide as charge storage and blocking-oxide layers in sonos-type nonvolatile memory for high-speed operation |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82443 |
| _version_ |
1781784138977640448 |