Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation
10.1109/TED.2006.870273
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Main Authors: | Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Cho, B.J. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82443 |
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Institution: | National University of Singapore |
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