Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

10.1109/TED.2006.870273

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Bibliographic Details
Main Authors: Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82443
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Institution: National University of Singapore

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