High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition

10.1109/LED.2009.2035144

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Bibliographic Details
Main Authors:	Liu, X., Chin, H.-C., Tan, L.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Flatband voltage shift Frequency dispersion Gallium nitride (GaN) High-k In situ surface passivation Interface state density.
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82468
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-824682023-10-25T22:05:51Z High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition Liu, X. Chin, H.-C. Tan, L.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Flatband voltage shift Frequency dispersion Gallium nitride (GaN) High-k In situ surface passivation Interface state density. 10.1109/LED.2009.2035144 IEEE Electron Device Letters 31 1 8-10 EDLED 2014-10-07T04:29:45Z 2014-10-07T04:29:45Z 2010-01 Article Liu, X., Chin, H.-C., Tan, L.S., Yeo, Y.-C. (2010-01). High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition. IEEE Electron Device Letters 31 (1) : 8-10. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2035144 07413106 http://scholarbank.nus.edu.sg/handle/10635/82468 000273090800004 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Flatband voltage shift Frequency dispersion Gallium nitride (GaN) High-k In situ surface passivation Interface state density.
spellingShingle	Flatband voltage shift Frequency dispersion Gallium nitride (GaN) High-k In situ surface passivation Interface state density. Liu, X. Chin, H.-C. Tan, L.S. Yeo, Y.-C. High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition
description	10.1109/LED.2009.2035144
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, X. Chin, H.-C. Tan, L.S. Yeo, Y.-C.
format	Article
author	Liu, X. Chin, H.-C. Tan, L.S. Yeo, Y.-C.
author_sort	Liu, X.
title	High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition
title_short	High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition
title_full	High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition
title_fullStr	High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition
title_full_unstemmed	High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition
title_sort	high-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82468
_version_	1781784144793042944

High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition

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