High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition

High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition

10.1109/LED.2009.2035144

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Bibliographic Details
Main Authors: Liu, X., Chin, H.-C., Tan, L.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Flatband voltage shift
Frequency dispersion
Gallium nitride (GaN)
High-k
In situ surface passivation
Interface state density.
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82468
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82468

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