In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs

10.1109/LED.2008.921393

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書目詳細資料
Main Authors:	Chin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	Dielectric films GaAs High-κ High-permittivity III-V compound semiconductors Mobility MOSFET Semiconductor device fabrication Semiconductor devices Surface passivation
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82520
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

實物特徵
總結:	10.1109/LED.2008.921393

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