In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs

In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs

10.1109/LED.2008.921393

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Bibliographic Details
Main Authors: Chin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Dielectric films
GaAs
High-κ
High-permittivity
III-V compound semiconductors
Mobility
MOSFET
Semiconductor device fabrication
Semiconductor devices
Surface passivation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82520
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82520

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