In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs

10.1109/LED.2008.921393

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Bibliographic Details
Main Authors:	Chin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Dielectric films GaAs High-κ High-permittivity III-V compound semiconductors Mobility MOSFET Semiconductor device fabrication Semiconductor devices Surface passivation
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82520
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82520
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spelling	sg-nus-scholar.10635-825202024-11-11T18:19:46Z In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs Chin, H.-C. Zhu, M. Tung, C.-H. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Dielectric films GaAs High-κ High-permittivity III-V compound semiconductors Mobility MOSFET Semiconductor device fabrication Semiconductor devices Surface passivation 10.1109/LED.2008.921393 IEEE Electron Device Letters 29 6 553-556 EDLED 2014-10-07T04:30:21Z 2014-10-07T04:30:21Z 2008-06 Article Chin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C. (2008-06). In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs. IEEE Electron Device Letters 29 (6) : 553-556. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.921393 07413106 http://scholarbank.nus.edu.sg/handle/10635/82520 000256189000006 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Dielectric films GaAs High-κ High-permittivity III-V compound semiconductors Mobility MOSFET Semiconductor device fabrication Semiconductor devices Surface passivation
spellingShingle	Dielectric films GaAs High-κ High-permittivity III-V compound semiconductors Mobility MOSFET Semiconductor device fabrication Semiconductor devices Surface passivation Chin, H.-C. Zhu, M. Tung, C.-H. Samudra, G.S. Yeo, Y.-C. In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
description	10.1109/LED.2008.921393
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chin, H.-C. Zhu, M. Tung, C.-H. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Chin, H.-C. Zhu, M. Tung, C.-H. Samudra, G.S. Yeo, Y.-C.
author_sort	Chin, H.-C.
title	In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
title_short	In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
title_full	In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
title_fullStr	In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
title_full_unstemmed	In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
title_sort	in situ surface passivation and cmos-compatible palladium-germanium contacts for surface-channel gallium arsenide mosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82520
_version_	1821189222334201856

In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs

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