In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
10.1109/LED.2008.921393
محفوظ في:
| المؤلفون الرئيسيون: | , , , , |
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| التنسيق: | مقال |
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2014
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| الوصول للمادة أونلاين: | http://scholarbank.nus.edu.sg/handle/10635/82520 |
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| المؤسسة: | National University of Singapore |
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sg-nus-scholar.10635-82520 |
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sg-nus-scholar.10635-825202024-11-11T18:19:46Z In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs Chin, H.-C. Zhu, M. Tung, C.-H. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Dielectric films GaAs High-κ High-permittivity III-V compound semiconductors Mobility MOSFET Semiconductor device fabrication Semiconductor devices Surface passivation 10.1109/LED.2008.921393 IEEE Electron Device Letters 29 6 553-556 EDLED 2014-10-07T04:30:21Z 2014-10-07T04:30:21Z 2008-06 Article Chin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C. (2008-06). In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs. IEEE Electron Device Letters 29 (6) : 553-556. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.921393 07413106 http://scholarbank.nus.edu.sg/handle/10635/82520 000256189000006 Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| topic |
Dielectric films GaAs High-κ High-permittivity III-V compound semiconductors Mobility MOSFET Semiconductor device fabrication Semiconductor devices Surface passivation |
| spellingShingle |
Dielectric films GaAs High-κ High-permittivity III-V compound semiconductors Mobility MOSFET Semiconductor device fabrication Semiconductor devices Surface passivation Chin, H.-C. Zhu, M. Tung, C.-H. Samudra, G.S. Yeo, Y.-C. In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs |
| description |
10.1109/LED.2008.921393 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Chin, H.-C. Zhu, M. Tung, C.-H. Samudra, G.S. Yeo, Y.-C. |
| format |
Article |
| author |
Chin, H.-C. Zhu, M. Tung, C.-H. Samudra, G.S. Yeo, Y.-C. |
| author_sort |
Chin, H.-C. |
| title |
In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs |
| title_short |
In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs |
| title_full |
In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs |
| title_fullStr |
In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs |
| title_full_unstemmed |
In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs |
| title_sort |
in situ surface passivation and cmos-compatible palladium-germanium contacts for surface-channel gallium arsenide mosfets |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82520 |
| _version_ |
1821189222334201856 |