In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs

In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs

10.1109/LED.2008.921393

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書目詳細資料
Main Authors: Chin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
主題:
Dielectric films
GaAs
High-κ
High-permittivity
III-V compound semiconductors
Mobility
MOSFET
Semiconductor device fabrication
Semiconductor devices
Surface passivation
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/82520
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機構: National University of Singapore
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spelling sg-nus-scholar.10635-825202024-11-11T18:19:46Z In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs Chin, H.-C. Zhu, M. Tung, C.-H. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Dielectric films GaAs High-κ High-permittivity III-V compound semiconductors Mobility MOSFET Semiconductor device fabrication Semiconductor devices Surface passivation 10.1109/LED.2008.921393 IEEE Electron Device Letters 29 6 553-556 EDLED 2014-10-07T04:30:21Z 2014-10-07T04:30:21Z 2008-06 Article Chin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C. (2008-06). In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs. IEEE Electron Device Letters 29 (6) : 553-556. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.921393 07413106 http://scholarbank.nus.edu.sg/handle/10635/82520 000256189000006 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Dielectric films
GaAs
High-κ
High-permittivity
III-V compound semiconductors
Mobility
MOSFET
Semiconductor device fabrication
Semiconductor devices
Surface passivation
spellingShingle Dielectric films
GaAs
High-κ
High-permittivity
III-V compound semiconductors
Mobility
MOSFET
Semiconductor device fabrication
Semiconductor devices
Surface passivation
Chin, H.-C.
Zhu, M.
Tung, C.-H.
Samudra, G.S.
Yeo, Y.-C.
In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
description 10.1109/LED.2008.921393
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Chin, H.-C.
Zhu, M.
Tung, C.-H.
Samudra, G.S.
Yeo, Y.-C.
format Article
author Chin, H.-C.
Zhu, M.
Tung, C.-H.
Samudra, G.S.
Yeo, Y.-C.
author_sort Chin, H.-C.
title In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
title_short In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
title_full In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
title_fullStr In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
title_full_unstemmed In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
title_sort in situ surface passivation and cmos-compatible palladium-germanium contacts for surface-channel gallium arsenide mosfets
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82520
_version_ 1821189222334201856

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