In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain

10.1149/1.3516213

Saved in:

Bibliographic Details
Main Authors:	Zhang, X., Guo, H., Gong, X., Zhou, Q., Lin, Y.-R., Lin, H.-Y., Ko, C.-H., Wann, C.H., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82526
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82526
record_format	dspace
spelling	sg-nus-scholar.10635-825262024-11-10T04:42:38Z In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain Zhang, X. Guo, H. Gong, X. Zhou, Q. Lin, Y.-R. Lin, H.-Y. Ko, C.-H. Wann, C.H. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3516213 Electrochemical and Solid-State Letters 14 2 H60-H62 ESLEF 2014-10-07T04:30:25Z 2014-10-07T04:30:25Z 2011 Article Zhang, X., Guo, H., Gong, X., Zhou, Q., Lin, Y.-R., Lin, H.-Y., Ko, C.-H., Wann, C.H., Yeo, Y.-C. (2011). In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain. Electrochemical and Solid-State Letters 14 (2) : H60-H62. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3516213 10990062 http://scholarbank.nus.edu.sg/handle/10635/82526 000285158800018 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.3516213
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhang, X. Guo, H. Gong, X. Zhou, Q. Lin, Y.-R. Lin, H.-Y. Ko, C.-H. Wann, C.H. Yeo, Y.-C.
format	Article
author	Zhang, X. Guo, H. Gong, X. Zhou, Q. Lin, Y.-R. Lin, H.-Y. Ko, C.-H. Wann, C.H. Yeo, Y.-C.
spellingShingle	Zhang, X. Guo, H. Gong, X. Zhou, Q. Lin, Y.-R. Lin, H.-Y. Ko, C.-H. Wann, C.H. Yeo, Y.-C. In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
author_sort	Zhang, X.
title	In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
title_short	In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
title_full	In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
title_fullStr	In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
title_full_unstemmed	In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
title_sort	in0.7ga0.3 as channel n-mosfet with self-aligned ni-ingaas source and drain
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82526
_version_	1821220989141254144

In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain

Similar Items