In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain

• Main Authors: Zhang, X., Guo, H., Gong, X., Zhou, Q., Lin, Y.-R., Lin, H.-Y., Ko, C.-H., Wann, C.H., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82526
• Institution: National University of Singapore

10.1149/1.3516213