Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications
10.1116/1.2357746
Saved in:
Main Authors: | , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82685 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
id |
sg-nus-scholar.10635-82685 |
---|---|
record_format |
dspace |
spelling |
sg-nus-scholar.10635-826852023-10-30T20:19:38Z Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications Ding, S.-J. Huang, Y.-J. Li, Y. Zhang, D.W. Zhu, C. Li, M.-F. ELECTRICAL & COMPUTER ENGINEERING 10.1116/1.2357746 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 24 6 2518-2522 JVTBD 2014-10-07T04:32:18Z 2014-10-07T04:32:18Z 2006 Article Ding, S.-J., Huang, Y.-J., Li, Y., Zhang, D.W., Zhu, C., Li, M.-F. (2006). Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 24 (6) : 2518-2522. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2357746 10711023 http://scholarbank.nus.edu.sg/handle/10635/82685 000243324400005 Scopus |
institution |
National University of Singapore |
building |
NUS Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NUS Library |
collection |
ScholarBank@NUS |
description |
10.1116/1.2357746 |
author2 |
ELECTRICAL & COMPUTER ENGINEERING |
author_facet |
ELECTRICAL & COMPUTER ENGINEERING Ding, S.-J. Huang, Y.-J. Li, Y. Zhang, D.W. Zhu, C. Li, M.-F. |
format |
Article |
author |
Ding, S.-J. Huang, Y.-J. Li, Y. Zhang, D.W. Zhu, C. Li, M.-F. |
spellingShingle |
Ding, S.-J. Huang, Y.-J. Li, Y. Zhang, D.W. Zhu, C. Li, M.-F. Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications |
author_sort |
Ding, S.-J. |
title |
Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications |
title_short |
Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications |
title_full |
Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications |
title_fullStr |
Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications |
title_full_unstemmed |
Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications |
title_sort |
metal-insulator-metal capacitors using atomic-layer-deposited al 2o3/hfo2/al2o3 sandwiched dielectrics for wireless communications |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/82685 |
_version_ |
1781784199501447168 |