Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications

10.1116/1.2357746

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Bibliographic Details
Main Authors:	Ding, S.-J., Huang, Y.-J., Li, Y., Zhang, D.W., Zhu, C., Li, M.-F.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82685
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Institution:	National University of Singapore

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