Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain

10.1109/LED.2007.910793

Saved in:

Bibliographic Details
Main Authors:	Lee, R.T.P., Yang, L.-T., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ang, K.-W., Lai, D.M.Y., Hoe, K.M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Fin field-effect-transistor (FinFET) Multiple-gate transistor Nickel silicide (NiSi) Silicide Silicon-carbon (Si:C)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82763
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82763
record_format	dspace
spelling	sg-nus-scholar.10635-827632023-10-30T08:01:48Z Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain Lee, R.T.P. Yang, L.-T. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Ang, K.-W. Lai, D.M.Y. Hoe, K.M. Lo, G.-Q. Samudra, G.S. Chi, D.Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Fin field-effect-transistor (FinFET) Multiple-gate transistor Nickel silicide (NiSi) Silicide Silicon-carbon (Si:C) 10.1109/LED.2007.910793 IEEE Electron Device Letters 29 1 89-92 EDLED 2014-10-07T04:33:13Z 2014-10-07T04:33:13Z 2008-01 Article Lee, R.T.P., Yang, L.-T., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ang, K.-W., Lai, D.M.Y., Hoe, K.M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C. (2008-01). Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain. IEEE Electron Device Letters 29 (1) : 89-92. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910793 07413106 http://scholarbank.nus.edu.sg/handle/10635/82763 000252098100027 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Fin field-effect-transistor (FinFET) Multiple-gate transistor Nickel silicide (NiSi) Silicide Silicon-carbon (Si:C)
spellingShingle	Fin field-effect-transistor (FinFET) Multiple-gate transistor Nickel silicide (NiSi) Silicide Silicon-carbon (Si:C) Lee, R.T.P. Yang, L.-T. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Ang, K.-W. Lai, D.M.Y. Hoe, K.M. Lo, G.-Q. Samudra, G.S. Chi, D.Z. Yeo, Y.-C. Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
description	10.1109/LED.2007.910793
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lee, R.T.P. Yang, L.-T. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Ang, K.-W. Lai, D.M.Y. Hoe, K.M. Lo, G.-Q. Samudra, G.S. Chi, D.Z. Yeo, Y.-C.
format	Article
author	Lee, R.T.P. Yang, L.-T. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Ang, K.-W. Lai, D.M.Y. Hoe, K.M. Lo, G.-Q. Samudra, G.S. Chi, D.Z. Yeo, Y.-C.
author_sort	Lee, R.T.P.
title	Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
title_short	Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
title_full	Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
title_fullStr	Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
title_full_unstemmed	Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
title_sort	nickel-silicide: carbon contact technology for n-channel mosfets with silicon-carbon source/drain
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82763
_version_	1781784217267470336

Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain

Similar Items