Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain

• Main Authors: Lee, R.T.P., Yang, L.-T., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ang, K.-W., Lai, D.M.Y., Hoe, K.M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Fin field-effect-transistor (FinFET); Multiple-gate transistor; Nickel silicide (NiSi); Silicide; Silicon-carbon (Si:C)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82763
• Institution: National University of Singapore

10.1109/LED.2007.910793