Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction
10.1116/1.3584823
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2014
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sg-nus-scholar.10635-828852023-10-25T21:59:39Z Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction Fang, L.W.-W. Zhao, R. Lim, K.-G. Yang, H. Shi, L. Chong, T.-C. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1116/1.3584823 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 3 - JVTBD 2014-10-07T04:34:38Z 2014-10-07T04:34:38Z 2011-05 Article Fang, L.W.-W., Zhao, R., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C. (2011-05). Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3584823 10711023 http://scholarbank.nus.edu.sg/handle/10635/82885 000291111300031 Scopus |
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National University of Singapore |
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Asia |
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Singapore Singapore |
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| description |
10.1116/1.3584823 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Fang, L.W.-W. Zhao, R. Lim, K.-G. Yang, H. Shi, L. Chong, T.-C. Yeo, Y.-C. |
| format |
Article |
| author |
Fang, L.W.-W. Zhao, R. Lim, K.-G. Yang, H. Shi, L. Chong, T.-C. Yeo, Y.-C. |
| spellingShingle |
Fang, L.W.-W. Zhao, R. Lim, K.-G. Yang, H. Shi, L. Chong, T.-C. Yeo, Y.-C. Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction |
| author_sort |
Fang, L.W.-W. |
| title |
Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction |
| title_short |
Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction |
| title_full |
Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction |
| title_fullStr |
Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction |
| title_full_unstemmed |
Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction |
| title_sort |
phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82885 |
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1781784245287518208 |