Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction

Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction

10.1116/1.3584823

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Bibliographic Details
Main Authors:	Fang, L.W.-W., Zhao, R., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82885
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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