Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks

Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks

10.1109/JPHOTOV.2013.2270350

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Bibliographic Details
Main Authors: Duttagupta, S., Ma, F.-J., Lin, S.F., Mueller, T., Aberle, A.G., Hoex, B.
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Article
Published: 2014
Subjects:
Aluminum oxide/silicon nitride (AlOx/SiN x) stacks
boron-doped emitters
crystalline silicon
phosphorus-doped emitters
plasma-enhanced chemical vapor deposition (PECVD)
surface passivation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82937
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Institution: National University of Singapore
Description
Summary:10.1109/JPHOTOV.2013.2270350

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