Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks

• Main Authors: Duttagupta, S., Ma, F.-J., Lin, S.F., Mueller, T., Aberle, A.G., Hoex, B.
• Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
• Format: Article
• Published: 2014
• Subjects: Aluminum oxide/silicon nitride (AlOx/SiN x) stacks; boron-doped emitters; crystalline silicon; phosphorus-doped emitters; plasma-enhanced chemical vapor deposition (PECVD); surface passivation
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82937
• Institution: National University of Singapore

10.1109/JPHOTOV.2013.2270350