Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs

10.1109/LED.2009.2034111

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Bibliographic Details
Main Authors:	Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Aluminum implant Contact resistance FinFETs Nickel (Ni)-dysprosium (Dy)-alloy germanosilicide (NiDySiGe) Schottky barrier height
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82998
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82998
record_format	dspace
spelling	sg-nus-scholar.10635-829982023-10-30T07:10:25Z Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs Sinha, M. Lee, R.T.P. Chor, E.F. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Aluminum implant Contact resistance FinFETs Nickel (Ni)-dysprosium (Dy)-alloy germanosilicide (NiDySiGe) Schottky barrier height 10.1109/LED.2009.2034111 IEEE Electron Device Letters 30 12 1278-1280 EDLED 2014-10-07T04:36:01Z 2014-10-07T04:36:01Z 2009-12 Article Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C. (2009-12). Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs. IEEE Electron Device Letters 30 (12) : 1278-1280. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2034111 07413106 http://scholarbank.nus.edu.sg/handle/10635/82998 000272044500010 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Aluminum implant Contact resistance FinFETs Nickel (Ni)-dysprosium (Dy)-alloy germanosilicide (NiDySiGe) Schottky barrier height
spellingShingle	Aluminum implant Contact resistance FinFETs Nickel (Ni)-dysprosium (Dy)-alloy germanosilicide (NiDySiGe) Schottky barrier height Sinha, M. Lee, R.T.P. Chor, E.F. Yeo, Y.-C. Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs
description	10.1109/LED.2009.2034111
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Sinha, M. Lee, R.T.P. Chor, E.F. Yeo, Y.-C.
format	Article
author	Sinha, M. Lee, R.T.P. Chor, E.F. Yeo, Y.-C.
author_sort	Sinha, M.
title	Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs
title_short	Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs
title_full	Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs
title_fullStr	Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs
title_full_unstemmed	Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs
title_sort	schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained p-finfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82998
_version_	1781784271355117568

Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs

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