Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs

10.1109/LED.2009.2034111

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Bibliographic Details
Main Authors: Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82998
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Institution: National University of Singapore
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