Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts

Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts

10.1109/LED.2012.2191760

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Bibliographic Details
Main Authors: Tong, Y., Liu, B., Lim, P.S.Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Nickel germanide (NiGe)
Schottky barrier height
segregation
selenium implant
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83002
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2012.2191760

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