Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics

10.1142/S0219581X05003036

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Bibliographic Details
Main Authors:	Chong, C.C., Zhou, K.H., Bai, P., Li, Er.P., Samudra, G.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Flash memory High-k dielectric Programming time Quantum dot Retention time Tunneling current
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83006
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83006
record_format	dspace
spelling	sg-nus-scholar.10635-830062023-10-29T20:23:54Z Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics Chong, C.C. Zhou, K.H. Bai, P. Li, Er.P. Samudra, G.S. ELECTRICAL & COMPUTER ENGINEERING Flash memory High-k dielectric Programming time Quantum dot Retention time Tunneling current 10.1142/S0219581X05003036 International Journal of Nanoscience 4 2 171-178 2014-10-07T04:36:07Z 2014-10-07T04:36:07Z 2005-04 Article Chong, C.C., Zhou, K.H., Bai, P., Li, Er.P., Samudra, G.S. (2005-04). Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics. International Journal of Nanoscience 4 (2) : 171-178. ScholarBank@NUS Repository. https://doi.org/10.1142/S0219581X05003036 0219581X http://scholarbank.nus.edu.sg/handle/10635/83006 000246301200002 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Flash memory High-k dielectric Programming time Quantum dot Retention time Tunneling current
spellingShingle	Flash memory High-k dielectric Programming time Quantum dot Retention time Tunneling current Chong, C.C. Zhou, K.H. Bai, P. Li, Er.P. Samudra, G.S. Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics
description	10.1142/S0219581X05003036
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chong, C.C. Zhou, K.H. Bai, P. Li, Er.P. Samudra, G.S.
format	Article
author	Chong, C.C. Zhou, K.H. Bai, P. Li, Er.P. Samudra, G.S.
author_sort	Chong, C.C.
title	Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics
title_short	Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics
title_full	Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics
title_fullStr	Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics
title_full_unstemmed	Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics
title_sort	self-consistent simulation of quantum dot flash memory device with sio 2 and hfo 2 dielectrics
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83006
_version_	1781784273196417024

Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics

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