Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics

10.1142/S0219581X05003036

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Bibliographic Details
Main Authors: Chong, C.C., Zhou, K.H., Bai, P., Li, Er.P., Samudra, G.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83006
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Institution: National University of Singapore

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